PART |
Description |
Maker |
M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M |
128K X 8 STANDARD SRAM, 100 ns, PDSO32 1048576-bit (131072-word by 8-bit) CMOS static SRAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
CXK591000TM/YM/M-10LL CXK591000TM/YM/M-70LL CXK591 |
131072-word x 9-bit High Speed CMOS Static RAM 131072-word x 9-bit High Speed CMOS Static RAM 131072字9位高速CMOS静态RAM
|
SONY Vishay Intertechnology, Inc.
|
HN28F101SERIES 28F101 |
131072-word ′ 8-bit CMOS Flash Memory From old datasheet system
|
hitachi
|
M5M5V216ART-70HI M5M5V216ART-55HI M5M5V216ATP M5M5 |
Memory>Low Power SRAM 2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
M5M27C202JK-12I M5M27C202JK-15I M5M27C202K-12I M5M |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152位(131072字由16位)的CMOS电可擦除只读光盘可重复编
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M5V216AWG M5M5V216AWG-70LW M5M5V216AWG-55H M5M5V |
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM 2097152位(131072字由16位)的CMOS静态RAM From old datasheet system
|
http:// Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HM658128A |
131072-word x 8-bit High Speed CMOS Pseudo Static RAM
|
Hitachi
|
M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
M6MGD967W3 |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
|
RENESA
|